US 9,520,338 B2Granted

Transistor, heat sink structure thereof and method for manufacturing same

AssigneeZte Corporation

InventorsDapeng Wang, Zhiyong Zhao, Wu Zeng, Xuelu Mu, Baiqing Zong, Yijun Cui

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Abstract

A transistor is provided, which includes: a semiconductor growth substrate and a semiconductor thermoelectric effect device, wherein the semiconductor thermoelectric effect device contains a semiconductor compound layer, a metal layer, a heat conducting layer, a thermocouple heat conducting device and a heat sink layer, the semiconductor compound layer is grown on the semiconductor growth substrate, the metal layer is grown on the semiconductor compound layer, the heat conducting layer is grown on the metal layer, the thermocouple heating conducting device is grown on the heat conducting layer, and the heat sink layer is grown on the other side surface of the thermocouple heat conducting device opposite to the heat conducting layer. The thermocouple heating conducting device may further contain power supply arms which are grown on the heat conducting layer and are electrically connected with the thermocouple heat conducting device.

Claims16

Dependent claims

A transistor, comprising:

a semiconductor growth substrate and a semiconductor thermoelectric effect device, wherein the semiconductor thermoelectric effect device comprises a semiconductor compound layer (2), a metal layer (3), a heat conducting layer (4), a thermocouple heat conducting device and a heat sink layer (9), the semiconductor compound layer (2) is grown on the semiconductor growth substrate, the metal layer (3) is grown on the semiconductor compound layer (2), the heat conducting layer (4) is grown on the metal layer (3), the thermocouple heat conducting device is grown on the heat conducting layer (4), and the heat sink layer (9) is grown on the other side surface of the thermocouple heat conducting device opposite to the heat conducting layer (4);
and the thermocouple heat conducting device may further contain power supply arms (5) which are grown on the heat conducting layer (4) and are electrically connected with the thermocouple heat conducting device;
wherein the thermocouple heat conducting device comprises groups of N type thermocouples and P type thermocouples, multiple channels (11) arranged in sequence are set on the metal layer (3), the openings of the channels are located on the opposite side of the bonding surface of the metal layer (3) and the semiconductor compound layer (2), the heat conducting layer (4) is grown at the bottom of each channel, multiple groups of N type thermocouples and P type thermocouples are grown on the heat conducting layer (4) along the channels (11), the N type thermocouples and the P type thermocouples in each group are electrically connected with each other, the N type thermocouple and the P type thermocouple in adjacent groups are electrically connected with each other to form a path of N type thermocouple to P type thermocouple to N type thermocouple, and the power supply arms (5) are electrically connected with the N type thermocouple at one end of each channel (11) and the P type thermocouple at the other end of that channel.

A heat sink structure of a transistor, comprising:

a printed circuit board, a heat fin substrate and a transistor, wherein the printed circuit board is bonded on the heat fin substrate, the transistor is connected with the printed circuit board and comprises a semiconductor growth substrate and a semiconductor thermoelectric effect device, the semiconductor thermoelectric effect device comprises a semiconductor compound layer (2), a metal layer (3), a heat conducting layer (4), a thermocouple heat conducting device and a heat sink layer (9), the semiconductor compound layer (2) is grown on the semiconductor growth substrate, the metal layer (3) is grown on the semiconductor compound layer (2), the heat conducting layer (4) is grown on the metal layer (3), the thermocouple heat conducting device is grown on the heat conducting layer (4), and the heat sink layer (9) is grown on the other side of the thermocouple heat conducting device opposite to the heat conducting layer (4), the metal layer (3) of the transistor is welded with the heat fin on the heat fin substrate, the heat sink layer (9) is contacted with the heat fin, and the thermocouple heat conducting device may further contain power supply arms (5) which are grown on the heat conducting layer (4) and are electrically connected with the thermocouple heat conducting device.

A method for manufacturing a transistor, comprising the following steps:

providing a growth substrate layer (1), and growing the parts above the substrate layer (1), wherein the parts above the substrate layer comprises a conductive channel (11), a doped region, a semiconductor oxide and power supply electrodes;
growing a semiconductor compound layer (2) on the semiconductor growth substrate layer (1);
epitaxially growing a metal film on the surface of the compound layer (2), forming a metal layer (3) on the interface where a metal and a semiconductor are bonded through the vapor deposition technique, etching multiple regularly arranged channels (11) on the metal layer (3), and locating the openings of the channels (11) on the opposite side of the bonding surface of the metal layer (3) and the semiconductor compound layer (2);
growing a heat conducting layer (4) at the bottom of each channel (11) through the vapor deposition technique;
epitaxially growing power supply arms (5) and first power supply electrodes (6) on the surface of the heat conducting layer (4) through the electroplating and vapor deposition technique, the power supply arms (5) and the first power supply electrodes (6) being separated from each other;
epitaxially growing an N/P thermocouple semiconductor layer (7) on the surfaces of the first power supply electrodes (6), and doping the semiconductor material through a high temperature diffusion method and an ion implantation method to grow alternately arranged N type and P type thermocouples;
epitaxially growing second power supply electrodes (8) on the ends of the N/P type thermocouples of the thermocouple semiconductor layer (7) opposite to the first power supply electrodes (6) through the vapour deposition technique or an electroplating method, and
covering a heat conducting layer (9) on the surfaces of the second power supply electrodes (8).

5 more elements

Dependencies are inferred from the claim text.

Facts

Application: 14/653,693Filed 23 Aug 2013
Priority: CN 2012 1 059215619 Dec 2012
Published: US 2015/0348867 A13 Dec 2015
Granted: 13 Dec 2016
Term ends: Not estimatedThe source records don’t support an estimate.

Classification12 codes

H10W 40/28
Arrangements for cooling: comprising Peltier coolers
H10N 10/01
Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects: manufacture or treatment
H10N 10/17
Operating with only the Peltier or Seebeck effects: characterised by the structure or configuration of the cell or thermocouple forming the device
H10W 40/00
Arrangements for thermal protection or thermal control

Family

US 2015/0348867 A1Pre-grant publication · published 3 Dec 2015
US 9,520,338 B2This patent

From the US filing history. Foreign family members aren’t listed.

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