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US 9,520,329 B2Granted
Fully-depleted silicon-on-insulator transistors
AssigneeInternational Business Machines Corporation
InventorsTerence B. Hook, Horacio Mendez
Life of this patent
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Abstract
A fully-depleted silicon-on-insulator (FDSOI) semiconductor structure includes: a first PFET, a second PFET, and a third PFET each having a different threshold voltage and each being over an n-well that is biased to a first voltage; and a first NFET, a second NFET, and a third NFET each having a different threshold voltage and each being over a p-type substrate that is biased to a second voltage. The second voltage is different than the first voltage.
Claims18
A method of manufacturing a semiconductor structure, comprising:
- forming a well in a substrate;
- forming a first PFET, a second PFET, and a third PFET on a buried oxide (BOX) layer and over the well;
- forming a first NFET, a second NFET, and a third NFET on the BOX layer and over the substrate;
- forming a p-type back gate under the second PFET;
- forming an n-type back gate under the second NFET;
- biasing the well to a first voltage;
- and
- biasing the substrate to a second voltage different than the first voltage,
- wherein the first PFET, the second PFET, and the third PFET each has a different threshold voltage, and
- the first NFET, the second NFET, and the third NFET each has a different threshold voltage.
7 more elements
A method of manufacturing a semiconductor structure, comprising:
- forming a well in a substrate;
- forming a first PFET, a second PFET, and a third PFET on a buried oxide (BOX) layer and over the well;
- forming a first NFET, a second NFET, and a third NFET on the BOX layer and over the substrate;
- biasing the well to a first voltage;
- and
- biasing the substrate to a second voltage different than the first voltage,
- wherein the first PFET, the second PFET, and the third PFET each has a different threshold voltage,
- the first NFET, the second NFET, and the third NFET each has a different threshold voltage;
- the first voltage is a power supply voltage (VDD);
- and
- the second voltage is ground.
8 more elements
Dependencies are inferred from the claim text.