Semiconductor device and method for manufacturing same

A method for manufacturing a semiconductor device, comprising:

• forming, on a first surface of a semiconductor substrate,
• an integrated circuit,
• an I/O pad electrically connected to the integrated circuit,
• a color filter layer comprising, in a region in which pixels of a solid-state imaging element of the integrated circuit are formed,
• an RGB color filter corresponding to each of the pixels and a passivation layer, and
• a micro-lens array formed at a place corresponding to the solid-state imaging element on the color filter layer;
• forming a pattern of a resist for dry-etching having an opening on a second surface which is an opposite side to the first surface;
• forming a cavity dam on the I/O pad so as to surround a lateral side of the micro-lens array and the color filter layer;
• forming a glass substrate on the cavity dam;
• forming a first shape portion opened from the second surface to a predetermined position of the semiconductor substrate in a thickness direction so that a diameter of an opening of the first shape portion in the second surface is larger than a diameter of an opening of the resist for dry-etching and the first shape portion is formed in a tapered shape of which a hole diameter of the first shape portion becomes smaller toward a bottom of the first shape portion, by dry-etching the semiconductor substrate in an RIE mode using a dry-etching apparatus using the resist for dry-etching as a mask;
• forming a second shape portion comprising a cylindrical wall surface with the same diameter as that of the opening of the resist for dry-etching which extends from the bottom of the first shape portion to the I/O pad, by performing dry-etching in a Bosch mode using the dry-etching apparatus using the resist for dry-etching as a mask;
• forming an inorganic insulating film using a chemical vapor deposition method, on an inner wall surface of a two-stage through-hole constituted by the first shape portion and the second shape portion and on the second surface;
• dry-etching an entire surface of the insulating film, and removing the insulating film located on the I/O pad and exposing a part of the I/O pad while leaving the insulating film on the inner wall surface of the two-stage through-hole and on the second surface;
• forming a through-electrode by forming a metal film on the exposed part of the I/O pad and on the inner wall surface of the two-stage through-hole;
• and
• forming a wiring pattern on the second surface which is connected to the through-electrode.