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US 9,520,301 B2Granted
Etching method using plasma, and method of fabricating semiconductor device including the etching method
AssigneeSamsung Electronics Co., Ltd.
InventorsGo-jun Kim, Vladimir Volynets, Sang-jin An, Hee-jeon Yang, Sang-heon Lee, Sung-keun Cho, Xinglong Chen, In-ho Choi
Life of this patent
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Abstract
An etching method using plasma includes generating plasma by supplying process gases to at least one remote plasma source (RPS) and applying power to the at least one RPS, and etching an etching object by supplying water (H2O) and the plasma to a process chamber.
Claims18
An etching method using plasma, the method comprising:
- generating plasma by supplying process gases to at least one remote plasma source (RPS) and applying power to the at least one RPS;
- and
- etching an etching object by supplying water (H2O) and hydrogen (H2) to a process chamber with the plasma, wherein the water and the hydrogen are supplied to the process chamber without being supplied to the at least one RPS.
An etching method using plasma, the method comprising:
- generating plasma by supplying process gases to a process chamber and applying power to the process chamber;
- and
- etching an etching object by supplying at least one of water (H2O) and hydrogen (H2) to the process chamber with the plasma,
- wherein the water is supplied during a pretreatment step performed on the etching object before an etching process, or in the form of vapor during the etching process, and
- wherein the supply of the water during the pretreatment step is provided by placing the etching object with water in a sealed space or spraying steam toward the etching object.
2 more elements
An etching method using plasma, the method comprising:
- generating a plasma in at least two remote plasma sources (RPS's);
- and
- supplying at least one of water (H2O) and hydrogen (H2) to an etching object in a process chamber in a presence of the plasma to etch the etching object.
Dependencies are inferred from the claim text.