Metal doping of amorphous carbon and silicon films used as hardmasks in substrate processing systems

A method for depositing a metal-doped amorphous silicon hardmask film, comprising:

• arranging a substrate in a processing chamber;
• supplying a carrier gas to the processing chamber;
• supplying a silicon precursor gas to the processing chamber;
• supplying a metal-based precursor gas to the processing chamber;
• one of creating plasma in or supplying plasma to the processing chamber;
• and
• depositing a metal-doped amorphous silicon hardmask film on the substrate.

A substrate processing system for depositing a metal-doped amorphous carbon hardmask film, comprising:

• a processing chamber including a substrate support configured to support a substrate;
• a gas supply system configured to selectively supply process gas to the processing chamber;
• a plasma generator configured to selectively create plasma in or supply plasma to the processing chamber;
• a controller configured to control the gas supply system and the plasma generator and configured to:
• supply a carrier gas to the processing chamber;
• supply a hydrocarbon precursor gas to the processing chamber;
• supply a metal-based precursor gas to the processing chamber;
• provide, to the substrate support, first RF power at a first frequency;
• provide, to the substrate support, second RF power at a second frequency less than the first frequency;
• control the plasma generator to create plasma in or supply plasma to the processing chamber;
• and
• deposit a metal-doped amorphous carbon hardmask film on the substrate, wherein the carbon hardmask film includes metal carbide.

A substrate processing system for depositing a metal-doped amorphous silicon hardmask film, comprising:

• a processing chamber including a substrate support configured to support a substrate;
• a gas supply system configured to selectively supply process gas to the processing chamber;
• a plasma generator configured to selectively create plasma in or supply plasma to the processing chamber;
• a controller configured to control the gas supply system and the plasma generator and configured to:
• supply a carrier gas to the processing chamber;
• supply a silicon precursor gas to the processing chamber;
• supply a metal-based precursor gas to the processing chamber;
• control the plasma generator to create plasma in or supply plasma to the processing chamber;
• and
• deposit a metal-doped amorphous silicon hardmask film on the substrate.