Ion implantation for improved etch performance

A method comprising:

• providing a set of patterning features atop an anti-reflective coating (ARC) layer of a semiconductor device, the set of patterning features formed from a photoresist;
• forming a treated layer along a top surface and a sidewall surface of the set of patterning features by implanting ions into the top surface and the sidewall surface of the set of patterning features, the ions implanted into the sidewall surface at an angle formed with the sidewall surface of approximately 60° relative to a plane normal to the sidewall surface to form the treated layer only partially along a vertical depth of the sidewall surface;
• and
• vertically etching the ARC layer after the ions are implanted into the top surface and the sidewall surface of the set of patterning features to remove the treated layer along the top surface of the set of patterning features.

A method for patterning a semiconductor device, the method comprising:

• providing a set of patterning features atop a layer of a semiconductor device, the layer formed atop a second layer;
• forming a first treated layer along a top surface and a sidewall surface of the set of patterning features by performing a first ion implant to the top surface and the sidewall surface of the set of patterning features, the ions implanted into the sidewall surface at an angle formed with the sidewall surface of approximately 60° relative to a plane normal to the sidewall surface;
• vertically etching the semiconductor device to vertically recess the set of patterning features and the layer;
• forming a second treated layer along the top surface and the sidewall surface of the set of patterning features by performing a second ion implant to the top surface and the sidewall surface of the set of patterning features, the ions implanted into the sidewall surface at an angle formed with the sidewall surface of approximately 60° relative to a plane normal to the sidewall surface;
• and
• vertically etching the semiconductor device to remove the set of patterning features and to recess the layer selective to the second layer.