US 9,520,284 B1 · Ion beam activated directional deposition

Abstract

Approaches herein provide precise areal surface reaction with directional ion beam activation. Exemplary approaches include selectively forming a material within a trench of a semiconductor device using a plurality of successive deposition and activation cycles. Each of the plurality of deposition and activation cycles includes forming a precursor conformally along a set of surfaces of the trench, reacting the precursor with a capping compound to form a capping layer along the set of surfaces of the trench, and performing an ion implant to the semiconductor device to activate just a portion of the capping layer. In one approach, the ion implant activates just a portion of the capping layer along a bottom surface of the trench. In another approach, the ion implant activates just a portion of the capping layer along an upper section of a sidewall of the trench.

Claims19

Dependent claims

A method comprising:

exposing a trench of a semiconductor device to a first precursor;
forming a capping layer along a set of surfaces of the trench by reacting the first precursor with a capping compound;
performing an ion implant to the semiconductor device to activate a portion of the capping layer by breaking up a capping molecule of the capping compound;
and
exposing the trench to a second precursor.

2 more elements

Dependencies are inferred from the claim text.

Facts

Application

14/940,980Filed 13 Nov 2015

Granted

13 Dec 2016

Term ends

Not estimatedThe source records don’t support an estimate.

Classification11 codes

H10P 14/6339
Using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition: deposition by cyclic CVD, e.g. ALD, ALE or…
C23C 16/045
Coating on selected surface areas, e.g. using masks: coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
C23C 16/345
Nitrides: silicon nitride
C23C 16/45534
Characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures…

Ion beam activated directional deposition

Life of this patent

Ion beam activated directional deposition

Life of this patent

Abstract

Claims19