Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

A method of manufacturing a semiconductor device, comprising:

• treating a surface of an insulating film formed on a substrate by supplying a first gas containing a halogen group to the substrate;
• and
• forming a thin film containing a predetermined element on the treated surface of the insulating film by performing a cycle a predetermined number of times, the cycle comprising:
• supplying a second gas containing the predetermined element and a halogen group to the substrate;
• and supplying a third gas to the substrate,
• wherein in the act of treating the surface of the insulating film, a seed layer containing the halogen group is formed on the surface of the insulating film, and
• wherein a thickness of the seed layer is 0.5 to 2 Å.

A method of manufacturing a semiconductor device, comprising:

• treating a surface of an insulating film formed on a substrate by supplying a first gas containing a halogen group to the substrate;
• and
• forming a thin film containing a predetermined element on the treated surface of the insulating film by performing a cycle a predetermined number of times, the cycle comprising:
• supplying a second gas containing the predetermined element and a halogen group to the substrate;
• and
• supplying a third gas to the substrate,
• wherein the first gas and the second gas comprise different substances.

A non-transitory computer-readable recording medium storing a program that causes a computer to perform a process of:

• treating a surface of an insulating film formed on a substrate by supplying a first gas containing a halogen group to the substrate;
• and
• forming a thin film containing a predetermined element on the treated surface of the insulating film by performing a cycle a predetermined number of times, the cycle comprising:
• supplying a second gas containing the predetermined element and a halogen group to the substrate;
• and supplying a third gas to the substrate,
• wherein in the process of treating the surface of the insulating film, the surface of the insulating film is terminated by the halogen group.