Electrode assembly and plasma processing apparatus

A plasma processing apparatus comprising:

• a processing chamber in which a substrate is housed;
• a lower electrode disposed in the processing chamber, the lower electrode mounting the substrate thereon;
• an electrode assembly facing the lower electrode in the processing chamber, the electrode assembly functioning as an upper electrode;
• and
• a processing gas supply device that supplies a processing gas into the processing chamber, wherein
• an electrostatic chuck is disposed on an upper surface of the lower electrode, the electrostatic chuck including an electrode plate and a pair of insulating layers that sandwich the electrode plate,
• a feeder tube is connected to the lower electrode, the feeder tube being constructed by an inner tube and an outer tube, the inner tube functioning as a supply path which supplies radio frequency electrical power to the lower electrode, the outer tube functioning as a return path through which the radio frequency electrical power returns from the lower electrode, the inner tube of the feeder tube housing a movable connecting member in an inner space thereof,
• a connecting terminal is connected to the electrode plate while penetrating through the lower electrode,
• the movable connecting member has therein a feeder rod made of conductive material,
• in the inner space of the inner tube, an insulating material coil spring houses therein and supports the movable connecting member so that the feeder rod moves together with the movable connecting member integrally,
• a connecting terminal side end of the feeder rod is exposed,
• another end of the feeder rod is connected to a DC power source,
• the movable connecting member is pushed to the connecting terminal by the insulating material coil spring thereby ensuring contact of the connecting terminal and the feeder rod so that a DC voltage is stably applied to the electrode plate.

A mounting stage which holds a substrate by electrostatic attraction comprising:

• a lower electrode to which a radio frequency power source is connected;
• an electrostatic chuck disposed on the lower electrode and holding the substrate by the electrostatic attraction;
• an electrode plate disposed inside the electrostatic chuck;
• and
• an electrode structure applying DC voltage to the electrode plate,
• wherein the electrode structure has
• a feeder tube connected to the lower electrode,
• a connecting terminal connected to the electrode plate while penetrating through the lower electrode,
• a movable feeder rod contacting the connecting terminal,
• a movable connecting member which has therein the movable feeder rod, the movable connecting member moving together with the movable feeder rod integrally, and
• an insulating material coil spring housing therein and supporting the movable connecting member to cause the movable connecting member move,
• wherein
• the feeder tube is constructed by an inner tube and an outer tube, the inner tube functions as a supply path which supplies radio frequency electrical power to the lower electrode, and the outer tube functions as a return path through which the radio frequency electrical power returns from the lower electrode,
• the moveable connecting member is housed in an inner space of the inner tube of the feeder tube,
• in the inner space of the inner tube, the insulating material coil spring houses therein and supports the movable connecting member so that the movable feeder rod moves together with the movable connecting member integrally,
• a connecting terminal side end of the movable feeder rod is exposed,
• another end of the movable feeder rod is connected to a DC power source, and
• the movable connecting member is pushed to the connecting terminal by the insulating material coil spring thereby ensuring contact of the connecting terminal and the movable feeder rod so that the DC voltage is stably applied to the electrode plate.

A plasma processing apparatus comprising:

• a chamber housing a substrate;
• a mounting stage disposed in the chamber and holding the substrate by electrostatic attraction;
• and
• a gas supplying unit supplying a processing gas into the chamber,
• wherein the mounting stage has
• a lower electrode to which a radio frequency power source is connected;
• an electrostatic chuck disposed on the lower electrode and holding the substrate by the electrostatic attraction;
• an electrode plate disposed inside the electrostatic chuck;
• and
• an electrode structure applying DC voltage to the electrode plate, and
• wherein the electrode structure has
• a feeder tube connected to the lower electrode,
• a connecting terminal connected to the electrode plate while penetrating through the lower electrode,
• a movable feeder rod contacting the connecting terminal,
• a movable connecting member which has therein the movable feeder rod, the movable connecting member moving together with the movable feeder rod integrally, and
• an insulating material coil spring housing therein and supporting the movable connecting member to cause the movable connecting member move,
• wherein
• the feeder tube is constructed by an inner tube and an outer tube, the inner tube functions as a supply path which supplies radio frequency electrical power to the lower electrode, and the outer tube functions as a return path through which the radio frequency electrical power returns from the lower electrode,
• the movable connecting member is housed in an inner space of the inner tube of the feeder tube,
• in the inner space of the inner tube, the insulating material coil spring houses therein and supports the moveable connecting member so that the movable feeder rod moves together with the movable connecting member integrally,
• a connecting terminal side end of the movable feeder rod is exposed,
• another end of the movable feeder rod is connected to a DC power source, and
• the movable connecting member is pushed to the connecting terminal by the insulating material coil spring thereby ensuring contact of the connecting terminal and the movable feeder rod so that the DC voltage is stably applied to the electrode plate.