RF switch with inter-domain ESD protection

A semiconductor die having an RF switch integrated circuit with inter-domain ESD protection fabricated thereon, wherein the RF switch integrated circuit comprises:

• an RF domain section having a plurality of RF switching elements;
• a DC domain section having circuitry configured for driving the RF switching elements;
• and
• at least one primary ESD element formed on a semiconductor die containing the RF domain section and the DC domain section;
• wherein the at least one primary ESD protection element is internally coupled on the semiconductor die between a pin of the RF domain section and a pin of the DC domain section and provides a direct discharge path for inter-domain ESD events occuring between pins associated with the DC domain section and pins associated with the RF domain section.

A method of fabricating an RF switch integrated circuit having inter-domain ESD protection;

• the method comprises:
• providing an RF domain section having a plurality of RF switching elements on a semiconductor die;
• providing a DC domain section having circuitry configured for driving the RF switching elements on the semiconductor die;
• and
• forming at least one primary ESD protection element on the semiconductor die containing the RF domain section and the DC domain section;
• wherein the at least one primary ESD protection element is internally coupled between a pin of the RF domain section and a pin of the DC domain and provides a direct discharge path for inter-domain ESD events occuring between pins associated with the DC domain section and pins associated with the RF domain section.