Method of forming upper electrode of nanowire array
AssigneeKorea Research Institute of Standards and Science
InventorsWoo Lee, Hee Han
Life of this patent
Estimating the term…
Abstract
Provided are a method of forming an upper electrode of a nanowire array and a nanowire array having an upper electrode formed thereon. The method includes a step of placing a polymeric thin film layer, a step of pressing, a step of treating a mixed solution, a step of etching, and a step of depositing an electrode material, such that the upper electrode is reliably formed in a state in which the polymeric thin film layer is formed on a portion of the nanowire, thereby making it possible to implement various nano-devices based on the nanowire array aligned on a substrate having a large area.
Claims9
A method of forming an upper electrode of a nanowire array in which a plurality of nanowires are arranged on a substrate having a plate shape, the method comprising:
- a step of placing a polymeric thin film layer (S10), heating the nanowire array and placing a polymeric thin film layer on the heated nanowire array;
- a step of pressing (S20), applying pressure to the polymeric thin film layer placed on the nanowire array in the step of placing the polymeric thin film layer (S10);
- a step of treating a mixed solution (S30), dipping the nanowire array having the polymeric thin film layer pressed thereon in the mixed solution and removing a portion of the polymeric thin film layer;
- a step of etching (S40), etching the polymeric thin film layer so that a portion of the nanowires passes through the polymeric thin film layer and is exposed to the outside;
- and
- a step of depositing an electrode material (S50), depositing an electrode material on the nanowire exposed to the outside in the step of etching (S40).
Dependencies are inferred from the claim text.