Memory device and reading method thereof
AssigneeMacronix International Co., Ltd.
InventorKuo-Pin Chang
Life of this patent
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Abstract
A memory device includes: a plurality of conductive stacked structures including at least a string select line, a plurality of word lines and at least a ground select line; a plurality of memory cells formed in the conductive stacked structures; a plurality of bit lines, formed on the conductive stacked structures; and at least an odd common source line and at least an even common source line, formed on the conductive stacked structures. The odd common source line is coupled to a plurality of odd bit lines of the bit lines. The even common source line is coupled to a plurality of even bit lines of the bit lines.
Claims4
A memory device including:
- a plurality of conductive stack structures, including at least a string select line, a plurality of word lines, at least an odd ground select line and at least an even ground select line;
- a plurality of memory cells, formed in the conductive stack structures;
- a plurality of bit lines, formed on the conductive stack structures;
- and
- at least a common source line, formed on the conductive stack structures,
- wherein the odd ground select line is coupled to a plurality of odd bit lines of the bit lines, and the even ground select line is coupled to a plurality of even bit lines of the bit lines.
Dependencies are inferred from the claim text.