Semiconductor memory device including three-dimensional memory cell array structure and operating method thereof
AssigneeSK hynix Inc.
InventorsSe Kyoung Choi, Eun Seok Choi, Jung Seok Oh
Life of this patent
Estimating the term…
Abstract
An operating method includes biasing channel regions of unselected cell strings among the cell strings to an initial voltage while applying a first pass voltage to the plurality of word lines; floating the channel regions of the unselected cell strings; increasing the first pass voltage to a second pass voltage during the floating of the channel regions; and reading data from selected memory cells of selected cell strings among the cell strings.
Claims20
An operating method of a three-dimensional semiconductor memory device including cell strings each having memory cells stacked over a substrate and coupled to a plurality of word lines, the operating method comprising:
- biasing channel regions of unselected cell strings among the cell strings to an initial voltage while applying a first pass voltage to the plurality of word lines;
- floating the channel regions of the unselected cell strings;
- increasing the first pass voltage to a second pass voltage during the floating of the channel regions;
- and
- reading data from selected memory cells of selected cell strings among the cell strings.
A semiconductor memory device, comprising:
- cell strings including memory cells stacked over a substrate and coupled to a plurality of word lines;
- and
- a peripheral circuit coupled to the cell strings through the plurality of word lines, and configured to set channel regions of unselected cell strings among the cell strings before a read operation,
- wherein the peripheral circuit is further configured to:
- bias the channel regions of the unselected cell strings to an initial voltage while applying a first pass voltage to the plurality of word lines;
- float the channel regions of the unselected cell strings immediately after biasing the channel regions of the unselected cell strings;
- and
- increases the first pass voltage to a second pass voltage.
Dependencies are inferred from the claim text.