Adaptive erase of a storage device

A storage device, having one or more non-volatile memory devices, comprising:

• an interface for coupling the storage device to a host system;
• and
• one or more controllers, each of the one or more controllers configured to:
• perform a plurality of memory operations including read operations and a first set of erase operations on portions of the one or more non-volatile memory devices specified by the read operations and the first set of erase operations, wherein the first set of erase operations are performed using a first set of erase parameters that has been established as a current set of erase parameters prior to performing the respective erase operations;
• in accordance with each erase operation of at least a subset of the first set of erase operations, update one or more erase statistics that correspond to performance of multiple erase operations;
• in accordance with a comparison of the erase statistics with an erasure performance threshold, establish a second set of erase parameters as the current set of erase parameters;
• and
• subsequent to establishing the second set of erase parameters as the current set of erase parameters, performing a subsequent erase operation on one or more portions of the one or more non-volatile memory devices using the second set of erase parameters;
• wherein
• the method includes generating a count of how many erase operations of the multiple erase operations have durations that exceed a predefined duration threshold, wherein each erase operation erases one or more blocks of memory cells;
• and
• a respective erase statistic of the erase statistics corresponds to the count of how many erase operations of the multiple erase operations have durations that exceed the predefined duration threshold.

A non-transitory computer readable storage medium, storing one or more programs for execution by one or more processors of a storage device having one or more controllers, the one or more programs including instructions for:

• performing a plurality of memory operations including read operations and a first set of erase operations on portions of the one or more non-volatile memory devices specified by the read operations and the first set of erase operations, wherein the respective erase operations are performed using a first set of erase parameters that has been established as a current set of erase parameters prior to performing the first set of erase operations;
• in accordance with each erase operation of at least a subset of the first set of erase operations, updating one or more erase statistics that correspond to performance of multiple erase operations;
• in accordance with a comparison of the erase statistics with an erasure performance threshold, establishing a second set of erase parameters as the current set of erase parameters;
• and
• subsequent to establishing the second set of erase parameters as the current set of erase parameters, performing a subsequent erase operation on one or more portions of the one or more non-volatile memory devices using the second set of erase parameters;
• wherein
• the method includes generating a count of how many erase operations of the multiple erase operations have durations that exceed a predefined duration threshold, wherein each erase operation erases one or more blocks of memory cells;
• and
• a respective erase statistic of the erase statistics corresponds to the count of how many erase operations of the multiple erase operations have durations that exceed the predefined duration threshold.