Enhanced temperature compensation for resistive memory cell circuits

A system for performing a voltage-based measurement of a resistive memory cell having a plurality m of programmable cell states, the system comprising:

• a processor configured to:
• provide a prebiased voltage at a connecting node coupled to the resistive memory cell;
• couple a resistor circuit in parallel to the resistive memory cell such that the resistor is configured to reduce an effective resistance at the connecting node of the prebiasing circuit;
• prebias a bitline capacitance of the resistive memory cell by the prebiasing circuit;
• settle a sensing circuit to a target voltage by connecting the sensing circuit to one of a plurality of settling circuits, wherein the one of the plurality of settling circuits is selected based on a temperature reading of the resistive memory cell;
• sense a voltage of the resistive memory cell;
• and
• output a resultant value based on the sensed voltage.

A computer program product for performing a voltage-based measurement, the computer program product comprising a computer readable storage medium having program instructions embodied therewith, wherein the computer readable storage medium is not a transitory signal per se, the program instructions being executable by a processor to cause the processor to perform a method, the method comprising:

• providing, via the processor, a prebiased voltage at a connecting node coupled to the resistive memory cell;
• coupling, via the processor, a resistor circuit in parallel to the resistive memory cell such that the resistor is configured to reduce an effective resistance at the connecting node of the prebiasing circuit;
• prebiasing a bitline capacitance of the resistive memory cell by the prebiasing circuit;
• settling, via the processor, a sensing circuit to a target voltage by connecting the sensing circuit to one of a plurality of settling circuits, wherein the one of the plurality of settling circuits is selected based on a temperature reading of the resistive memory cell;
• sensing a voltage of the resistive memory cell;
• and
• outputting a resultant value based on the sensed voltage.