Electronic device

An electronic device comprising a semiconductor memory,

• wherein the semiconductor memory comprises:
• a first stacked structure comprising a first word line disposed over a substrate and extended in a first direction, a first bit line disposed over the first word line and extended in a second direction crossing the first direction, and a first variable resistance layer interposed between the first word line and the first bit line;
• and
• a second stacked structure comprising a second bit line disposed over the first stacked structure and extended in the second direction, a second word line disposed over the second bit line and extended in the first direction, and a second variable resistance layer interposed between the second word line and the second bit line;
• and
• a first selecting element layer interposed between the first bit line and the second bit line:
• and
• wherein the first variable resistance layer and the first selecting element layer form a first memory cell, and
• wherein the second variable resistance layer and the first selecting element layer form a second memory cell.