Method for writing in-system programming code into flash memory for better noise margin
AssigneeSilicon Motion, Inc.
InventorTsung-Chieh Yang
Life of this patent
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Abstract
The present invention provides a method for writing a data into a flash memory, wherein the flash memory is a Triple-Level Cell flash memory, and each storage unit of the flash memory is implemented by a floating-gate transistor and each storage unit supports eight write voltage levels, and the method includes: adjusting the data bit by bit to generate a pseudo-random bit sequence; and writing the pseudo-random bit sequence into the flash memory with only two specific voltage levels of the eight write voltage levels.
Claims6
A memory device, which comprising:
- a flash memory, wherein the flash memory is a Triple-Level Cell flash memory, each storage unit of the flash memory is implemented by a floating-gate transistor and each storage unit supports eight write voltage levels;
- and
- a memory controller arranged to access the flash memory;
- wherein before the first time the memory controller reads the flash memory, data in the flash memory is stored with only two specific voltage levels of the eight write voltage levels, wherein the data comprises least significant bits (LSBs), central significant bits (CSBs) and most significant bits (MSBs).
A flash memory, wherein the flash memory is a Triple-Level Cell flash memory, each storage unit of the flash memory is implemented by a floating-gate transistor and each storage unit supports eight write voltage levels;
- wherein before the first time the flash memory is read by a memory controller, data in the flash memory is stored with only two specific voltage levels of the eight write voltage levels, wherein the data comprises least significant bits (LSBs), central significant bits (CSBs) and most significant bits (MSBs).
Dependencies are inferred from the claim text.