Magnetization controlling element using magnetoelectric effect

A magnetization controlling element comprising:

• a ferromagnetic material layer;
• an exchange coupling adjustment layer;
• an antiferromagnetic material layer;
• an electrode layer;
• a magnetic field applying mechanism;
• and
• an electric field applying mechanism,
• wherein the ferromagnetic material layer, the exchange coupling adjustment layer, the antiferromagnetic material layer, and the electrode layer are disposed in that order from the ferromagnetic material layer side,
• the magnetic field applying mechanism applies a magnetic field to the antiferromagnetic material layer,
• the electric field applying mechanism applies an electric field to the antiferromagnetic material layer,
• the antiferromagnetic material layer is an insulator and contains an antiferromagnetic material or ferrimagnetic material having a magnetoelectric effect,
• the ferromagnetic material layer includes a ferromagnetic material layer that is magnetically connected, through exchange coupling, to the antiferromagnetic material layer,
• the exchange coupling adjustment layer has a function of adjusting exchange coupling between the ferromagnetic material layer and the antiferromagnetic material layer, and
• the exchange coupling adjustment layer has a thickness of from 0.25 nm to 1.0 nm and contains at least one element selected from the group consisting of transition metal elements excluding ferromagnetic metals, light metal elements, and semiconductor elements, whose atomic number is 45 or lower.