Resistive change memory

A resistive change memory comprising:

• a first ferromagnetic layer and a second ferromagnetic layer;
• a semiconductor element disposed between the first ferromagnetic layer and the second ferromagnetic layer, the semiconductor element including a first semiconductor layer of a first conductivity type, a second semiconductor layer of the first conductivity type, and a third semiconductor layer of a second conductivity type that is different from the first conductivity type, the third semiconductor layer being disposed between the first semiconductor layer and the second semiconductor layer, the first semiconductor layer being directly connected to the first ferromagnetic layer, and the second semiconductor layer being directly connected to the second ferromagnetic layer;
• and
• a read unit configured to perform a read operation by applying a first read voltage between the first ferromagnetic layer and the second ferromagnetic layer, and then applying a second read voltage that is lower than the first read voltage between the first ferromagnetic layer and the second ferromagnetic layer,
• a magnetization direction of one of the first ferromagnetic layer and the second ferromagnetic layer being switchable, and a magnetization direction of the other being fixed.