Semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsKiyoshi Kato, Toshihiko Saito
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Abstract
A variable capacitor is formed from a pair of electrodes and a dielectric interposed between the electrodes over a substrate, and an external input is detected by changing capacitance of the variable capacitor by a physical or electrical force. Specifically, a variable capacitor and a sense amplifier are provided over the same substrate, and the sense amplifier reads the change of capacitance of the variable capacitor and transmits a signal in accordance with the input to a control circuit.
Claims18
A semiconductor device comprising:
- a first substrate;
- a plurality of sensors over the first substrate, each of the plurality of sensors comprising a first electrode;
- a thin film transistor over the first substrate;
- an insulating film over the thin film transistor;
- a pixel electrode over the insulating film, the pixel electrode electrically connected to the thin film transistor;
- a liquid crystal over the first electrode and the pixel electrode;
- and
- a second substrate over the liquid crystal,
- wherein the plurality of sensors are arranged in two-dimensions,
- wherein each of the plurality of sensors outputs a capacitance change,
- wherein each of the first electrode and the pixel electrode comprises a transparent electrode, and
- wherein the first electrode is electrically connected to a first switch and a second switch.
A semiconductor device comprising:
- a first substrate;
- a sensor over the first substrate, the sensor comprising a first electrode;
- a thin film transistor over the first substrate;
- an insulating film over the thin film transistor;
- a pixel electrode over the insulating film, the pixel electrode electrically connected to the thin film transistor;
- a liquid crystal over the first electrode and the pixel electrode;
- and
- a second substrate over the liquid crystal,
- wherein the sensor outputs a capacitance change,
- wherein each of the first electrode and the pixel electrode comprises a transparent electrode, and
- wherein the first electrode is electrically connected to a first switch and a second switch.
A semiconductor device comprising:
- a first substrate;
- a plurality of sensors over the first substrate, each of the plurality of sensors comprising a first electrode;
- a thin film transistor over the first substrate;
- an insulating film over the thin film transistor;
- a pixel electrode over the insulating film, the pixel electrode electrically connected to the thin film transistor;
- a liquid crystal over the first electrode and the pixel electrode;
- and
- a second substrate over the liquid crystal,
- wherein each of the plurality of sensors outputs a capacitance change,
- wherein each of the first electrode and the pixel electrode comprises a transparent electrode, and
- wherein the first electrode is electrically connected to a first switch and a second switch.
Dependencies are inferred from the claim text.