Method of forming patterns and methods of manufacturing display panels using methods of forming patterns

A method of manufacturing a display panel, comprising:

• disposing a black matrix formation layer on a substrate comprising an active region;
• disposing a first photoresist film on the black matrix formation layer, the first photoresist film comprising at least two first shot regions;
• exposing each of the at least two first shot regions of the first photoresist film to light, wherein an overlapping region at a boundary between adjacent first shot regions is overlappingly exposed to light exposures onto the adjacent first shot regions;
• forming a first photoresist pattern on the black matrix formation layer by developing the first photoresist film;
• forming a black matrix pattern on the substrate by etching the black matrix formation layer using the first photoresist pattern as an etching mask;
• disposing a color filter formation layer on the first pattern;
• disposing a second photoresist film on the color filter formation layer, the second photoresist film comprising at least two second shot regions;
• exposing the at least two second shot regions of the second photoresist film to light, wherein a boundary region between adjacent second shot regions is disposed spaced apart from the overlapping region;
• forming a second photoresist pattern on the color filter formation layer by developing the second photoresist film;
• forming a first to a third color filters on the black matrix pattern by etching the color filter formation layer using the second photoresist pattern as an etching mask;
• disposing an overcoat formation layer on the second pattern;
• disposing a third photoresist film on the overcoat formation layer, the third photoresist film comprising at least two third shot regions;
• exposing each of the at least two third shot regions of the third photoresist film to light, wherein a boundary region between adjacent third shot regions is disposed spaced apart from the boundary region between adjacent second shot regions and the overlapping regions;
• forming a third photoresist pattern on the overcoat formation layer by developing the third photoresist film;
• and
• forming an overcoat layer on the second pattern by etching the overcoat formation layer using the third photoresist pattern as an etching mask,
• wherein exposing the first photoresist film comprises:
• exposing a first shot onto the first photoresist film using a first mask comprising a first main-transmissive pattern, a first sub-transmissive pattern and a first light blocking pattern;
• and
• exposing a second shot onto the first photoresist film using a second mask comprising a second main-transmissive pattern, a second sub-transmissive pattern and a second light blocking pattern.