High throughput hot testing method and system for high-brightness light-emitting diodes

A system for hot testing of light-emitting diodes (LEDs), each LED including an indium-gallium-nitride (InGaN) film, and a phosphor layer formed on the InGaN film, the system comprising:

• a laser positioned to direct its light onto an LED, the laser configured to selectively heat portions of the phosphor layer;
• a probe tester configured to apply an electric current to the InGaN film of the LED to establish a predetermined temperature in the InGaN film and to provide electroluminescence;
• an integrating sphere configured to collect light emitted by the LED during testing;
• and
• a spectrometer system configured to perform photometric measurements on light collected by the integrating sphere while said portions of the phosphor layer are heated by the laser and while the InGaN film is heated to the predetermined temperature.

A method of performing a hot test of a light-emitting diode (LED), the LED including an indium-gallium-nitride (InGaN) film, and a phosphor layer formed on the InGaN film, the method comprising:

• using a laser to selectively heat portions of the phosphor layer to a predetermined temperature gradient;
• using an electric current source to establish a predetermined temperature in the InGaN film;
• and
• performing photometric measurements on the LED while the phosphor layer is heated to the predetermined temperature gradient and while the InGaN film is at the predetermined temperature.

A system for hot testing of light-emitting diodes (LEDs), each LED including an indium-gallium-nitride (InGaN) film, and a phosphor layer formed on the InGaN film, the system comprising:

• a laser configured to selectively heat portions of the phosphor layer to a predetermined temperature gradient;
• an electric current source configured to establish a predetermined temperature in the InGaN film;
• an integrating sphere for positioning over the LED, the integrating sphere configured to collect light emitted by the LED during testing and
• a spectrometer system configured to perform photometric measurements on light collected by the integrating sphere while the phosphor layer is heated to the predetermined temperature gradient and while the InGaN film is at the predetermined temperature.