Metrology optimized inspection

A non-transitory computer-readable medium, storing program instructions executable on a computer system for performing a computer-implemented method for determining one or more parameters of a wafer inspection process, wherein the computer-implemented method comprises:

• acquiring metrology data for a wafer generated by a wafer metrology system, wherein the wafer metrology system performs measurements on the wafer thereby generating the metrology data, and wherein acquiring the metrology data comprises acquiring the metrology data from a storage medium in which the metrology data has been stored by the wafer metrology system;
• and
• determining one or more parameters of a wafer inspection process for the wafer or another wafer based on the metrology data, wherein the computer system comprises one or more processors and executes the program instructions from the non-transitory computer-readable medium, wherein the wafer inspection process is performed to detect defects on the wafer or the other wafer, and wherein determining the one or more parameters comprises:
• determining a probability of critical dimension variation in one or more areas of the wafer or the other wafer based on the metrology data;
• determining at least one of the one or more areas in which the probability is higher than other of the one or more areas;
• and
• determining the one or more parameters such that the at least one of the one or more areas is sampled by a wafer inspection system that performs the wafer inspection process more heavily than the other of the one or more areas.

A system configured to determine one or more parameters of a wafer inspection process, comprising:

• an inspection subsystem configured to generate output for a wafer by scanning a wafer with light and detecting light from the wafer during the scanning, wherein the inspection subsystem comprises at least a light source and a detector, and wherein the inspection subsystem scans light from the light source over the wafer, and wherein the detector detects the light from the wafer during the scanning;
• and
• a computer subsystem configured for:
• acquiring metrology data for the wafer generated by a wafer metrology system, wherein the wafer metrology system performs measurements on the wafer thereby generating the metrology data, and wherein acquiring the metrology data comprises acquiring the metrology data from a storage medium in which the metrology data has been stored by the wafer metrology system;
• and
• determining one or more parameters of a wafer inspection process for the wafer or another wafer based on the metrology data, wherein the computer subsystem comprises one or more processors and executes instructions from a memory medium, wherein the wafer inspection process is performed with the inspection subsystem and the one or more determined parameters to detect defects on the wafer or the other wafer, and wherein determining the one or more parameters comprises:
• determining a probability of critical dimension variation in one or more areas of the wafer or the other wafer based on the metrology data:
• determining at least one of the one or more areas in which the probability is higher than other of the one or more areas;
• and
• determining the one or more parameters such that the at least one of the one or more areas is sampled by the inspection subsystem that performs the wafer inspection process more heavily than the other of the one or more areas.