Integrated transducer provided with a temperature sensor and method for sensing a temperature of the transducer

A method, comprising:

• sensing resistive variation of a resistor sensor element in response to deflection of a membrane, said membrane formed of a semiconductor material of a first conductivity type and said resistor sensor element formed by a doped region of a second conductivity type located within the membrane and having first and second terminals across which said resistive variation is sensed;
• wherein said doped region further forms with said membrane a junction diode;
• sensing a voltage across the junction diode in response to application of a current to one of the first and second terminals to pass through the junction diode;
• and
• determining from the sensed voltage a temperature of the junction diode.

A method for use with a transducer having a body made of a semiconductor material having a first type of conductivity and including a doped region of a second type of conductivity forming a first resistor transducer element having first and second terminals, said doped region forming the first resistor transducer element further forming with said body a first junction diode, the method comprising:

• sensing a temperature of the transducer by:
• applying a first current to one of the first and second terminals of the first resistor transducer element to pass through said first junction diode;
• detecting a first voltage value across said first junction diode in response to the first current;
• and
• correlating said detected first voltage value to a value of a temperature of said first junction diode;
• and
• sensing a voltage drop across the first and second terminals of the first resistor transducer element that is indicative of change in the transducer.

A transducer, comprising:

• a body made of semiconductor material having a first type of conductivity;
• a doped region of a second type of conductivity forming a first resistor transducer element, extending in said body between first and second terminals, said doped region further forming with said body a first junction diode;
• a current generator configured to supply a first current to one of the first and second terminals to pass through the first junction diode;
• a voltage-measuring device configured to detect a first voltage value across the first junction diode when the first current is supplied to said one of the first and second terminals;
• and
• a processing device configured to acquire the first voltage value and correlate said first voltage value to a value of temperature of the first junction diode, said processing device further configured to detect change in voltage across the first and second terminals of the first resistor transducer element.