Micromechanical component for a capacitive sensor device, and manufacturing method for a micromechanical component for a capacitive sensor device

A capacitive sensor device comprising a micromechanical component for a capacitive sensor device, the micromechanical component including:

• a first electrode at least partially formed from a layer of at least one of a semiconductor material and a metal;
• and
• a second electrode that includes:
• a first layer, an inner side of which faces the first electrode and which is formed from a layer of at least one of a semiconductor material and a metal;
• and
• a second layer above the first layer;
• wherein:
• the second electrode is suspended above, and at a distance from, the first electrode so that a cavity is present between the first electrode and the second electrode;
• recesses (a) are structured into the first layer of the second electrode, and (b) are sealed off by a closure layer;
• the second layer of the second electrode:
• is a reinforcing layer that increases rigidity of the second electrode;
• is formed from a layer of epi-polysilicon material;
• and
• covers at least one subarea of the closure layer;
• and
• the layer of epi-polysilicon material additionally forms at least;
• a first contact element that is electrically connected to, and covers a respective surface of, one of (i) the first electrode, (ii) a first printed conductor composed of the same layer of the at least one of the semiconductor material and the metal as that of which the first electrode is made, and (iii) a conductive substrate area that is in a layer below the layer of the at least one of the semiconductor material and the metal of which the first electrode is made;
• and
• a second contact element that is electrically connected to, and covers a respective surface of, one of (i) the first layer of the second electrode and (ii) a second printed conductor composed of the same layer of the at least one of the semiconductor material and the metal as that of which the first layer of the second electrode is made.

A manufacturing method for a micromechanical component for a capacitive sensor device, the method comprising:

• forming a first electrode at least partially from a layer of at least one of a semiconductor material and a first metal;
• depositing at least one insulating layer above the first electrode;
• forming, from a layer of at least one of a semiconductor material and a metal and on the insulating layer, a first layer of a second electrode, an inner side of the first layer of the second electrode facing the first electrode, wherein recesses are structured in the first layer of the second electrode;
• forming a cavity between the first electrode and the first layer of the second electrode by etching off a subarea at least of the insulating layer through the recesses;
• depositing a closure layer above the first layer of the second electrode, thereby sealing off the recesses after the cavity is formed;
• and
• simultaneously forming, by deposition of a single layer of epi-polysilicon material, (a) a second layer of the second electrode over the closure layer and (b) at least a first contact element and a second contact element, wherein:
• the second layer of the second electrode is positioned over at least a portion of the closure layer and is a reinforcing layer that increases rigidity of the second electrode;
• the first contact element is electrically connected to, and covers a respective surface of, one of (i) the first electrode, a first printed conductor composed of the same layer of at least one of the semiconductor material and the metal as that of which the first electrode is made, and (iii) a conductive substrate area that is in a layer below the layer of the at least one of the semiconductor material and the metal of which the first electrode is made;
• and
• the second contact element is electrically connected to, and covers a respective surface of, one of (i) the first layer of the second electrode and (ii) a second printed conductor composed of the same layer of the at least one of the semiconductor material and the metal as that of which the first layer of the second electrode is made.

A manufacturing method for a capacitive sensor device, the method comprising:

• arranging a micromechanical component at least one of in and on the capacitive sensor device;
• wherein:
• the micromechanical component includes:
• a first electrode at least partially formed from a layer of at least one of a semiconductor material and a metal;
• and
• a second electrode that includes:
• a first layer, an inner side of which faces the first electrode and which is formed from a layer of at least one of a semiconductor material and a metal;
• and
• a second layer above the first layer;
• the second electrode is suspended above, and at a distance from, the first electrode so that a cavity is present between the first electrode and the second electrode;
• recesses (a) are structured into the first layer of the second electrode, and (b) are sealed off by a closure layer;
• the second layer of the second electrode:
• is a reinforcing layer that increases rigidity of the second electrode;
• is formed from a layer of epi-polysilicon material;
• and
• covers at least one subarea of the closure layer;
• and
• the layer of epi-polysilicon material additionally forms at least:
• a first contact element that is electrically connected to, and covers a respective surface of, one of (i) the first electrode, (ii) a first printed conductor composed of the same layer of the at least one of the semiconductor material and the metal as that of which the first electrode is made, and (iii) a conductive substrate area that is in a layer below the layer of the at least one of the semiconductor material and the metal of which the first electrode is made;
• and
• a second contact element that is electrically connected to, and covers a respective surface of, one of (i) the first layer of the second electrode and (ii) a second printed conductor composed of the same layer of the at least one of the semiconductor material and the metal as that of which the first layer of the second electrode is made.