Single crystal diamond
AssigneeElement Six Technologies Limited
InventorsGeoffrey Alan Scarsbrook, Philip Maurice Martineau, Daniel James Twitchen
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Abstract
A method of producing a large area plate of single crystal diamond from CVD diamond grown on a substrate substantially free of surface defects by chemical vapor deposition (CVD). The homoepitaxial CVD grown diamond and the substrate are severed transverse to the surface of the substrate on which diamond growth took place to produce the large area plate of single crystal CVD diamond.
Claims11
A method of producing a plate of single crystal diamond, which comprises providing a diamond substrate, growing diamond homoepitaxially on a surface of the substrate by chemical vapour deposition (CVD) and severing the homoepitaxial CVD grown diamond transverse to the surface of the substrate on which diamond growth took place to produce a plate of single crystal CVD diamond having side faces and major faces, the major faces being larger in area than the side surfaces, wherein the major faces are transverse to the surface of the substrate.
Dependencies are inferred from the claim text.