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US 9,518,075 B2Granted
Group 5 cyclopentadienyl transition metal-containing precursors for deposition of group 5 transition metal-containing films
AssigneeL'Air Liquide, Societe Anonyme pour l'Etude et l'Exploitation des Procedes Georges Claude
InventorsClément Lansalot-Matras, Wontae Noh
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Abstract
Transition metal-containing precursors are disclosed. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit transition metal-containing films on one or more substrates via a vapor deposition process.
Claims20
A transition metal-containing precursor having the formula:
- Formula 1), wherein M is selected from the group consisting of V and Ta and each of R1, R2, R3, R4, and R5 is independently selected from the group consisting of H;
- a C1-C5 linear, branched, or cyclic alkyl group;
- a C1-C5 linear, branched, or cyclic alkylsilyl group;
- a C1-C5 linear, branched, or cyclic alkylamino group;
- and a C1-C5 linear, branched, or cyclic fluoroalkyl group.
2 more elements
A process for the deposition of a transition metal-containing film on a substrate, comprising:
- introducing at least one transition metal-containing precursor into a reactor having at least one substrate disposed therein, the at least one transition metal-containing precursor having the following formula:
- wherein M is selected from the group consisting of V, and Ta and each of R1, R2, R3, R4, and R5 is independently selected from H;
- a C1-C5 linear, branched, or cyclic alkyl group;
- a C1-C5 linear, branched, or cyclic alkylsilyl group;
- a C1-C5 linear, branched, or cyclic alkylamino group;
- and a C1-C5 linear, branched, or cyclic fluoroalkyl group;
- and
- depositing at least part of the at least one transition metal-containing precursor onto the at least one substrate to form the transition metal-containing film using a vapor deposition method.
5 more elements
A transition metal-containing precursor having the formula:
- Formula 1), wherein M is Nb and each of R1, R2, R3, R4, and R5 is independently selected from the group consisting of H;
- a C1-C5 linear, branched, or cyclic alkyl group;
- a C1-C5 linear, branched, or cyclic alkylsilyl group;
- a C1-C5 linear, branched, or cyclic alkylamino group;
- and a C1-C5 linear, branched, or cyclic fluoroalkyl group, provided that R2 and R3 are the same.
2 more elements
A process for the deposition of a transition metal-containing film on a substrate, comprising:
- introducing at least one transition metal-containing precursor into a reactor having at least one substrate disposed therein, the at least one transition metal-containing precursor having the following formula:
- wherein M is Nb and each of R1, R2, R3, R4, and R5 is independently selected from H;
- a C1-C5 linear, branched, or cyclic alkyl group;
- a C1-C5 linear, branched, or cyclic alkylsilyl group;
- a C1-C5 linear, branched, or cyclic alkylamino group;
- and a C1-C5 linear, branched, or cyclic fluoroalkyl group, provided that R2 and R3 are the same;
- and
- depositing at least part of the at least one transition metal-containing precursor onto the at least one substrate to form the transition metal-containing film using a vapor deposition method.
5 more elements
Dependencies are inferred from the claim text.