Metal member, metal member surface processing method, semiconductor device, semiconductor device manufacturing method, and composite molded body

A semiconductor device comprising:

• a lead frame which includes a base made of a conductive metal material, and a metal thin film arranged on a surface of the base;
• an IC chip which is mounted on a surface of the metal thin film;
• and
• a molded resin which covers the IC chip and contacts with the surface of the metal thin film, wherein:
• the metal thin film is made of a material which has at least one of Ni, Au, Pd, and Ag as a main component;
• a groove having a width in a range between 5 μm and 300 μm and extending along a straight line parallel with the surface of the base is arranged at a surface portion of the surface of the metal thin film, which contacts with the molded resin;
• a plurality of convex portions are arranged around the groove at the surface portion of the metal thin film;
• and
• a fine unevenness is arranged to have a size, in which an average height of the convex portions is in a range between 1 nm and 500 nm, an average width of the convex portions is in a range between 1 nm and 300 nm, and an average distance between the convex portions is in a range between 1 nm and 300 nm.

A semiconductor device comprising:

• a lead frame which includes a base made of a conductive metal material, and a metal thin film arranged on a surface of the base;
• an IC chip which is mounted on a surface of the metal thin film;
• and
• a molded resin which covers the IC chip and contacts with the surface of the metal thin film, wherein:
• the metal thin film is made of a material which has at least one of Ni, Au, Pd, and Ag as a main component;
• a groove having a width in a range between 5 μm and 300 μm and extending along a straight line parallel with the surface of the base is arranged at a surface portion of the surface of the metal thin film, which contacts with the molded resin;
• a plurality of convex portions are arranged in the groove at the surface portion of the metal thin film;
• and
• a fine unevenness is arranged to have a size, in which an average height of the convex portions is in a range between 1 nm and 500 nm, an average width of the convex portions is in a range between 1 nm and 300 nm, and an average distance between the convex portions is in a range between 1 nm and 300 nm.

A composite molded body comprising:

• a metal member which includes a base made of a conductive metal material, and a metal thin film arranged on a surface of the base;
• and
• an electronic component which is bonded to a surface of the metal thin film through a solder, wherein:
• the metal thin film is made of a material which has at least one of Ni, Au, Pd, and Ag as a main component;
• a laser irradiation groove having a width in a range between 5 μm and 300 μm is arranged at least at a portion of the surface of the metal thin film, which is disposed around a region in which the solder is disposed;
• a plurality of convex portions are arranged around the groove;
• and
• a fine unevenness is arranged to have a size, in which an average height of the convex portions is in a range between 1 nm and 500 nm, an average width of the convex portions is in a range between 1 nm and 300 nm, and an average distance between the convex portions is in a range between 1 nm and 300 nm.

A semiconductor device comprising:

• a lead frame which includes a base made of a conductive metal material, and a metal thin film arranged on a surface of the base;
• an IC chip which is bonded to a surfaced of the metal thin film through a solder;
• and
• a molded resin which covers the IC chip and contacts with the surface of the metal thin film, wherein:
• the metal thin film is made of a material which has at least one of Ni, Au, Pd, and Ag as a main component;
• a laser irradiation groove having a width in a range between 5 μm and 300 μm is arranged at a portion of the surface of the metal thin film, which contacts with the molded resin, and is arranged at least at a portion of the surface of the metal thin film, which is disposed around a region in which the solder is disposed;
• a plurality of convex portions are arranged around the groove;
• and
• a fine unevenness is arranged to have a size in which an average height of the plurality of convex portions is in a range between 1 nm and 500 nm, an average width of the convex portions is in a range between 1 nm and 300 nm, and an average distance between the convex portions is in a range between 1 nm and 300 nm.