Integrated magnatoresistive sensing device

An integrated magnetoresistive sensing device, comprising:

• a substrate, having a first surface and a second surface opposite to the first surface;
• a magnetoresistive sensing element, disposed above the first surface and having at least a magnetoresistive layer not parallel to the first surface, wherein the magnetoresistive sensing element has a Wheatstone bridge configuration, and the Wheatstone bridge configuration has four resistive arms;
• and
• a built-in self test (BIST) unit, disposed above the first surface and having at least a conductive part corresponding to the magnetoresistive layer, wherein the conductive part is configured to generate a magnetic field along a direction perpendicular to the first surface,
• wherein the built-in self test (BIST) unit has at least four U-shaped sub-units, these four U-shaped sub-units correspond to the four resistive arms respectively.

An integrated magnetoresistive sensing device, comprising:

• a substrate, having a first surface and a second surface opposite to the first surface;
• a magnetoresistive sensing element, disposed above the first surface and having a Wheatstone bridge configuration;
• a built-in self test (BIST) unit, disposed above the first surface and having at least a conductive part at the periphery of the Wheatstone bridge configuration, wherein the conductive part is configured to generate a magnetic field along a direction perpendicular to the first surface,
• wherein a projection of the conductive part on the first surface does not overlap with a projection of the Wheatstone bridge configuration on the first surface, and the Wheatstone bridge configuration has four resistive arms and each resistive arm comprises at least a magnetoresistive layer not parallel to the first surface, and the built-in self test (BIST) unit has at least four U-shaped sub-units, these four U-shaped sub-units correspond to the four resistive arms respectively.