Passivated microelectromechanical structures and methods

A MEMS device comprising:

• a substrate;
• a first thin film beam over the substrate, wherein the first thin film beam includes one or more electrodes;
• a second thin film beam over the first thin film beam, the first thin film beam being arranged between the substrate and the second thin film beam and spaced away from the substrate and the second thin film beam, wherein the second thin film beam includes one or more apertures;
• first means for passivating the MEMS device partially covering an exterior surface of the second thin film beam and partially covering an exterior surface of the first thin film beam, wherein a portion of the first thin film beam and a portion of the second thin film beam are uncovered by the first passivating means;
• and
• second means for passivating the MEMS device over the first passivating means, the second passivating means covering the first passivating means layer and the uncovered portion of the first thin film beam and the uncovered portion of the second thin film beam.

A device comprising:

• a substrate;
• a conductive pad over the substrate;
• at least one first thin film layer contacting the conductive pad, wherein the at least one first thin film layer form at least part of a first thin film beam;
• at least one second thin film layer over the first thin film beam to form at least part of a second thin film beam, wherein the first thin film beam is spaced away from the substrate and the second thin film beam is spaced away from and overlapping the first thin film beam;
• a first pre-release passivation layer partially covering an exterior surface of the first thin film beam, wherein at least a portion of the first thin film beam is exposed;
• a post-release passivation layer over the first pre-release passivation layer, wherein the post-release passivation layer at least covers the exposed portion of the first thin film beam.