US 9,438,170 B2Granted

Power amplifier

AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.

InventorJun-De Jin

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Abstract

A power amplifier includes an input circuit configured to receive an input signal. At least two transistors connected in series. A first transistor of the at least two transistors is located at a first end of the at least two transistors. A second transistor of the at least two transistors is located at a second end of the at least two transistors. The first transistor is coupled to a low voltage power supply node. The first gate of the first transistor is coupled to a first bias voltage. The input signal is coupled to a first gate of the first transistor. At least one capacitor is coupled between a second gate of the second transistor and the low voltage power supply node. An output circuit coupled to a second gate of the second transistor.

Claims21

Dependent claims

A power amplifier, comprising:

an input circuit configured to receive an input signal;
at least three transistors connected in series, wherein a first transistor of the at least three transistors is located at a first end of the at least three transistors, a second transistor of the at least three transistors is located at a second end of the at least three transistors, a third transistor of the at least three transistors is connected in series between the first transistor and the second transistor, the first transistor is coupled to a low voltage power supply node, a first gate of the first transistor is coupled to a first bias voltage, and the input signal is coupled to the first gate of the first transistor;
at least one capacitor coupled between a second gate of the second transistor and the low voltage power supply node;
and
an output circuit coupled to a drain of the second transistor;
wherein a second gate of the second transistor is connected to a second bias voltage through a resistive capacitive circuit and the gate of the third transistor is connected to a third bias voltage through a resistive only circuit.

3 more elements

Dependencies are inferred from the claim text.

Facts

Application: 14/486,672Filed 15 Sep 2014
Published: US 2016/0079923 A117 Mar 2016
Granted: 6 Sep 2016
Term ends: Not estimatedThe source records don’t support an estimate.

Classification17 codes

H03F 1/0205
Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation: in transistor amplifiers
H03F 1/223
By use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively: with mosfet's
H03F 1/523
Circuit arrangements for protecting such amplifiers: for amplifiers using field-effect devices
H03F 3/19
High-frequency amplifiers, e.g. radio frequency amplifiers: with semiconductor devices only

Family

US 2016/0079923 A1Pre-grant publication · published 17 Mar 2016
US 9,438,170 B2This patent

From the US filing history. Foreign family members aren’t listed.

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