Low voltage and high driving charge pump
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorYuan-Long Siao
Life of this patent
Estimating the term…
Loading patent…
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorYuan-Long Siao
Estimating the term…
The present disclosure relates to a charge pump circuit having one or more voltage multiplier circuits that enable generation of an output signal having a higher output voltage. In one embodiment, the charge pump circuit comprises a NMOS transistor having a drain connected to a supply voltage and a source connected to a chain of diode connected NMOS transistors coupled in series. A first voltage multiplier circuit is configured to generate a first two-phase output signal having a maximum voltage value that is twice the supply voltage. The first two-phase output signal is applied to the gate of the NMOS transistor, forming a conductive channel between the drain and the source, thereby allowing the supply voltage to pass through the NMOS transistor without a threshold voltage drop. Therefore, degradation of the charge pump output voltage due to voltage drops of the NMOS transistor is reduced, resulting in larger output voltages.
A method of operating a charge pump circuit, comprising:
A method of operating a charge pump circuit, comprising:
A method of operating a charge pump circuit, comprising:
Dependencies are inferred from the claim text.