Vertical cavity surface emmiting laser
AssigneeSAE Magnetics (H.K.) Ltd.
InventorBabu Dayal Padullaparthi
Life of this patent
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Abstract
A VCSEL according to the invention, configured to emit a light having about 850 nm wavelength, comprises an active region which comprises one or more InxGa1-xAs quantum wells; two or more GaAs1-yPy barriers bonding to the one or more quantum wells; and x ranges from 0.05 to 0.1, and y ranges from 0.2 to 0.29. The VCSEL has increased optical confinement and high transmission speed, good reliability characteristics, high-temperature performance, and long life time.
Claims15
A vertical cavity surface emitting laser (VCSEL), configured to emit a light having about 850 nm wavelength, comprising:
- an active region which comprises:
- one or more InxGa1-xAs quantum wells;
- and
- two or more GaAs1-yPy barriers bonding to the one or more quantum wells;
- first and second phase matching layers;
- and
- two reflecting mirror stacks sandwiching the active region;
- wherein x ranges from 0.05 to 0.1, and y ranges from 0.2 to 0.29;
- and
- wherein at least one of the reflecting mirror stacks includes an annular or polygonal oxide layer providing a current confinement structure sandwiched between the first and second phase matching layers.
A vertical cavity surface emitting laser (VCSEL), comprising:
- an active region which comprises:
- one or more InxGa1-xAs quantum wells;
- and
- two or more GaAs1-yPy barriers bonding to the one or more quantum wells;
- first and second phase matching layers;
- and
- two reflecting mirror stacks sandwiching the active region;
- wherein there is a lack of transitional layers between the one or more quantum wells and the barriers;
- wherein at least one of the reflecting mirror stacks includes an annular or polygonal oxide layer providing a current confinement structure sandwiched between the first and second phase matching layers;
- wherein x ranges from 0.05 to 0.1, and y ranges from 0.2 to 0.29;
- and
- wherein the VCSEL is configured to emit a light having about 850 nm wavelength.
A vertical cavity surface emitting laser (VCSEL) for an optical module used in data communications, comprising:
- an active region which comprises:
- one or more InxGa1-xAs quantum wells;
- and
- two or more GaAs1-yPy barriers bonding to the one or more quantum wells, the barriers being tensile-strained;
- first and second phase matching layers;
- and
- two reflecting mirror stacks sandwiching the active region;
- wherein at least one of the reflecting mirror stacks includes an annular or polygonal oxide layer providing a current confinement structure sandwiched between the first and second phase matching layers;
- wherein the active region further comprises one or more separate confinement heterostructure layers formed adjacent to the barriers, the separate confinement heterostructure layer(s) being made of AlGaAs and being formed as a continuous ramp with no other transitional layers existing there-along;
- wherein x ranges from 0.05 to 0.1, and y ranges from 0.2 to 0.29;
- and
- wherein the VCSEL is configured to emit a light having about 850 nm wavelength.
Dependencies are inferred from the claim text.