Light-emitting transistors with improved performance

A light-emitting transistor device comprising:

• a substrate;
• a gate electrode;
• a channel layer comprising one or more organic sublayers, the one or more organic sublayers comprising:
• a first sublayer comprising an electron-transporting semiconductor material,
• a second sublayer comprising a hole-transporting semiconductor material, and
• a third sublayer comprising an electroluminescent semiconductor material and positioned between the first sublayer and the second sublayer;
• a gate insulating layer positioned between the gate electrode and the channel layer;
• and
• a hole electrode and an electron electrode being spaced apart from each other at a planar distance defining the length (L) of a channel region therebetween, the hole electrode being in contact with the second sublayer of the channel layer and the electron electrode being in contact with the first sublayer of the channel layer;
• wherein the channel layer further comprises a first electrically insulating element positioned between the hole electrode and the first sublayer of the channel layer, and a second electrically insulating element between the electron electrode and the second sublayer of the channel layer, wherein the first electrically insulating element and the second electrically insulating element are spaced apart from each other at a planar distance that is less than L;
• and
• wherein the first electrically insulating element overlaps vertically with the hole electrode but not the electron electrode and the second electrically insulating element overlaps vertically with the electron electrode but not the hole electrode.