Insulator material for use in RRAM
AssigneeImec
InventorsChristoph Adelmann, Malgorzata Jurczak
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Abstract
The present disclosure relates generally to Hf-comprising materials for use in, for example, the insulator of a RRAM device, and to methods for making such materials. In one aspect, the disclosure provides a method for the manufacture of a layer of material over a substrate, said method including a) providing a substrate, and b) depositing a layer of material on said substrate via ALD at a temperature of from 250 to 500° C., said depositing step comprising: at least one HfX4 pulse, and at least one trimethyl-aluminum (TMA) pulse, wherein X is a halogen selected from Cl, Br, I and F and is preferably Cl.
Claims13
A method for the manufacture of a layer of material over a substrate, said method comprising:
- a) providing a substrate, and
- b) depositing a layer of material on said substrate via atomic layer deposition (ALD) at a temperature of from 250 to 500° C., said depositing step comprising one or more deposition cycles, each said deposition cycle comprising:
- at least one HfX4 pulse followed by a purge, and
- at least one trimethyl-aluminum (TMA) pulse followed by a purge, and
- a single oxidizer (Ox) pulse followed by a purge,
- wherein X is a halogen selected from Cl, Br and I, and
- wherein a HfX4 pulse-purge sequence of each said deposition cycle is performed immediately before or immediately after a TMA pulse-purge sequence.
Dependencies are inferred from the claim text.