Phase change memory structures and methods

A memory cell, comprising:

• a phase change material in contact with a conductive material, wherein the conductive material contacts a first electrode in an opening between a first insulator region and a second insulator region, wherein the conductive material includes contoured sidewalls that contact a first spacer and a second spacer, wherein the first and second spacers include contoured sidewalls, wherein the first spacer is in contact with the first insulator region and the second spacer is in contact with the second insulator region, wherein the first insulator region includes a first contoured sidewall and the second insulator region includes a second contoured sidewall, and wherein the phase change material is between the first electrode and a second electrode.

An array of memory cells, comprising:

• a first memory cell including a first phase change material between a first electrode and a second electrode, wherein the first phase change material is formed in a first self-aligned opening, wherein a contoured sidewall of the first phase change material contacts a first spacer, and wherein the first spacer is formed on a first contoured sidewall of a dielectric material;
• a second memory cell including a second phase change material between a third electrode and a fourth electrode, wherein the second phase change material is formed in a second self-aligned opening, wherein a contoured sidewall of the second phase change material contacts a second spacer, and wherein the second spacer is formed on a second contoured sidewall of the dielectric material.