Method for making a magnetic random access memory element with small dimension and high quality

A method for making a small dimension and high quality magnetic random access memory (MRAM) element for further making a high density and high yield MRAM comprising:

• 1.1. making a bottom electrode (BE) layer atop a via in a semiconductor wafer in process that connects an associated read/write/control circuitry in the semiconductor wafer, further comprising:
• 1.1a. making a seed layer atop the semiconductor wafer in process;
• 1.1b. making a first conducting layer atop the seed layer;
• 1.1c. making an amorphous conducting layer atop the first conducting layer to break the grain growth of the conducting layer;
• 1.1d. making the amorphous conducting layer flatter and smoother;
• 1.1e. making a second conducting layer atop the amorphous conducting layer;
• and
• 1.1f. repeating the sequence of 1.1c.-1.1e. with zero (0) or more time(s) until a top surface of the BE in process becomes sufficiently flat and smooth;
• and
• 1.2. making a magnetic tunneling junction (MTJ) atop the BE.