Light generating device and method of manufacturing the same

A light generating device comprising:

• a p-type semiconductor layer;
• an n-type semiconductor layer;
• an active layer disposed between the p-type semiconductor layer and the n-type semiconductor layer;
• a p-type electrode providing the p-type semiconductor layer with holes;
• and
• an n-type electrode providing the n-type semiconductor layer with electrons, wherein at
• least one of the p-type electrode and n-type electrode has a protrusion protruding toward p-type semiconductor layer and the n-type semiconductor layer, respectively, and
• wherein the at least one of the p-type electrode and n-type electrode having a protrusion includes at least one of nickel (Ni) and gold (Au), and the protrusion is directly covered by a light reflecting layer including at least one of aluminum (Al) and silver (Ag).