Light emitting diode (LED) contact structures and process for fabricating the same

A light emitting device, comprising:

• an active layer configured to provide light emission;
• a surface on the active layer;
• and
• an electrically conductive contact structure comprising at least one plated contact layer on the surface, wherein a base of the plated contact layer adjacent the active layer is wider than a surface of the plated contact layer opposite the active layer,
• wherein the surface on the active layer includes a plurality of features protruding therefrom by more than about 0.5 micrometers (μm), and wherein the plated contact layer has a thickness of about 8 micrometers (μm) or less, and wherein a surface of the plated contact layer opposite the active layer has a surface roughness of less than about 10% of that of the surface on the active layer.

A light emitting device, comprising:

• an active layer configured to provide light emission;
• a surface on the active layer, the surface comprising a plurality of features protruding therefrom;
• and
• an electrically conductive contact structure comprising at least one plated contact layer on the protruding features of the surface and a conductive seed layer therebetween, wherein a surface of the plated contact layer opposite the active layer has a surface roughness of less than about 10% of that of the surface on the active layer, wherein the surface of the plated contact layer has a greater reflectivity with respect to the light emission than a surface of the conductive seed layer that is opposite the features protruding from the surface on the active layer, and wherein a base of the plated contact layer adjacent the active layer is wider than the surface of the plated contact layer opposite the active layer.

A light emitting device, comprising:

• an active layer configured to provide light emission;
• a light extraction surface comprising protruding features on the active layer;
• and
• an electrically conductive contact structure comprising at least one plated contact layer on the protruding features of the light extraction surface and a conductive seed layer therebetween,
• wherein a surface of the plated contact layer opposite the light extraction surface is substantial free of a surface roughness by the protruding features of the light extraction surface, and has a greater reflectivity with respect to the light emission than a surface of the conductive seed layer opposite the light extraction surface, and
• wherein the plated contact layer on the protruding features of the light extraction surface is substantially free of voids therein.