Optoelectronic semiconductor device

An optoelectronic semiconductor device, comprising:

• a substrate;
• a semiconductor system including a first conductivity layer, a second conductivity layer, and a conversion unit between the first conductivity layer and the second conductivity layer, wherein the first conductivity layer is closer to the substrate than the second conductivity layer is to the substrate, the second conductivity layer comprises a top surface perpendicular to a thickness direction of the semiconductor system, and in a top view of the semiconductor system, an outline of the first conductivity layer surrounds an outline of the second conductivity layer;
• a first electrical connector adjacent to the conversion unit;
• a second electrical connector constructing one of two ends of a current channel with the first electrical connector;
• a contact layer having an outer perimeter extending around an entire outer edge of the contact layer and being at an inner side of the outline of the second conductivity layer in the top view of the semiconductor system;
• and
• a plurality of discontinuous regions connecting to the outer perimeter, extending inwardly from the outer perimeter in a non-periodic pattern, and extending parallel to the top surface of the second conductivity layer, wherein a bottom of the plurality of discontinuous regions exposes the top surface of the second conductivity layer.

An optoelectronic semiconductor device, comprising:

• a substrate;
• a semiconductor system including a first conductivity layer, a second conductivity layer, and a conversion unit between the first conductivity layer and the second conductivity layer, wherein the first conductivity layer is closer to the substrate than the second conductivity layer is to the substrate, the second conductivity layer comprises a top surface perpendicular to a thickness direction of the semiconductor system, and in a top view of the semiconductor system, an outline of the first conductivity layer surrounds an outline of the second conductivity layer;
• an electrical connector disposed on one side of the conversion unit;
• a contact layer having an outer perimeter extending around an entire outer edge of the contact layer and being at an inner side of the outline of the second conductivity layer in the top view of the semiconductor system;
• and
• a plurality of discontinuous regions connecting to the outer perimeter, extending inwardly from the outer perimeter in a non-periodic pattern toward the electrical connector, extending parallel to the top surface of the second conductivity layer, and presenting an irregular variation in one dimension, and a bottom of the plurality of discontinuous regions exposes the top surface of the second conductivity layer.