Semiconductor light-emitting element and method for producing the same

A method for producing the semiconductor light-emitting element which comprises a substrate;

• a semiconductor layer that is provided over the substrate and comprises a p-type semiconductor layer, a light-emitting layer, and an n-type semiconductor layer;
• a first electrode that is provided in contact with part of an upper surface of the semiconductor layer and comprises a current supply part connected to a current supply line;
• a second electrode that is provided in part of a region vertically below a region where the current supply part is not provided, that is in contact with part of a bottom surface of the semiconductor layer, and that is made of a material that reflects light emitted from the light-emitting layer;
• and a first current blocking layer that is provided in a region including a region vertically below the current supply part and that is in contact with part of the bottom surface of the semiconductor layer, wherein a contact resistance at an interface between the first current blocking layer and the semiconductor layer is higher than that at an interface between the second electrode and the semiconductor layer, the method comprising:
• a step (a) in which the semiconductor layer is formed on a substrate;
• a step (b1) in which a material film for forming the second electrode is formed in a predetermined region on a first surface of the semiconductor layer, and then contact annealing treatment is performed to form the second electrode;
• a step (b2) in which, after the step (b1) is performed, a material film for forming the first current blocking layer is formed on the first surface of the semiconductor layer in a predetermined region where the second electrode is not provided, and then contact annealing treatment is performed at a temperature lower than that used in the step (b1) to form the first current blocking layer;
• a step (c) in which, after the step (b2) is performed, the first electrode is formed on a second surface of the semiconductor layer that is on a side opposite to the first surface;
• and
• a step (d) in which the current supply part connected to the current supply line is formed on the first electrode in part of a region opposed to the first current blocking layer in a direction perpendicular to a surface of the substrate.

A method for producing the semiconductor light-emitting element which comprises a substrate;

• a semiconductor layer that is provided over the substrate and comprises a p-type semiconductor layer, a light-emitting layer, and an n-type semiconductor layer;
• a first electrode that is provided in contact with part of an upper surface of the semiconductor layer and comprises a current supply part connected to a current supply line;
• a second electrode that is provided in part of a region vertically below a region where the current supply part is not provided, that is in contact with part of a bottom surface of the semiconductor layer, and that is made of a material that reflects light emitted from the light-emitting layer;
• and a first current blocking layer that is provided in a region including a region vertically below the current supply part and that is in contact with part of the bottom surface of the semiconductor layer, wherein a contact resistance at an interface between the first current blocking layer and the semiconductor layer is higher than that at an interface between the second electrode and the semiconductor layer, the method comprising:
• a step (a) in which the semiconductor layer is formed on a substrate;
• a step (b1) in which a material film having a multi-layered structure comprising an uppermost Pt layer is formed in a predetermined region on a first surface of the semiconductor layer, and then contact annealing treatment is performed to form the second electrode;
• a step (b2) in which, after the step (b1) is performed, the material film having a multi-layered structure comprising an uppermost Pt layer having a smaller film thickness than that in the step (b1) is formed on the first surface of the semiconductor layer in a place where the second electrode is not provided, and then contact annealing treatment is performed to form the first current blocking layer;
• a step (c) in which, after the step (b2) is performed, the first electrode is formed on a second surface of the semiconductor layer that is on a side opposite to the first surface;
• and
• a step (d) in which the current supply part connected to the current supply line is formed on the first electrode in part of a region opposed to the first current blocking layer in a direction perpendicular to a surface of the substrate.