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US 9,437,776 B2Granted
Method for manufacturing light emitting diodes with smooth surface for reflective electrode
AssigneeKabushiki Kaisha Toshiba
InventorsChao-Kun Lin, Heng Liu
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Abstract
A light emitting diode comprising an epitaxial layer structure, a first electrode, and a second electrode. The first and second electrodes are separately disposed on the epitaxial layer structure, and the epitaxial layer structure has a root-means-square (RMS) roughness less than about 3 at a surface whereon the first electrode is formed.
Claims14
A method for manufacturing a light emitting diode, comprising:
- forming an epitaxial layer structure, comprising a first epitaxial layer and a second epitaxial layer;
- and
- depositing a first electrode on the first epitaxial layer of the epitaxial layer structure;
- depositing a transparent ohmic contact layer on the second epitaxial layer of the epitaxial structure;
- and
- depositing a second electrode on the transparent ohmic contact layer, wherein the transparent ohmic contact layer has a root-means-square (RMS) roughness less than about 3 nm at a surface whereon the second electrode is deposited.
3 more elements
A method for manufacturing a light emitting diode, comprising:
- forming an epitaxial layer structure, comprising a first epitaxial layer and a second epitaxial layer;
- and
- depositing a first electrode on the first epitaxial layer of the epitaxial layer structure;
- depositing a transparent ohmic contact layer on the second epitaxial layer of the epitaxial structure;
- and
- depositing a second electrode on the transparent ohmic layer, wherein:
- the transparent ohmic contact layer has a root-means-square (RMS) roughness less than about 3 nm at a surface whereon the second electrode is deposited, and
- the light emitting diode is a vertical light emitting diode device.
5 more elements
A method for manufacturing a light emitting diode, comprising:
- forming an epitaxial layer structure, comprising a first epitaxial layer and a second epitaxial layer;
- depositing a first electrode on the first epitaxial layer of the epitaxial layer structure;
- depositing a transparent ohmic contact layer on the second epitaxial layer of the epitaxial layer structure;
- and
- depositing a second electrode on the transparent ohmic contact layer, wherein:
- the transparent ohmic contact layer has a root-means-square (RMS) roughness less than about 3 nm at a surface whereon the second electrode is deposited,
- the second electrode is mounted on a sub-mount substrate, and
- the substrate is selected from a group consisting of Cu, Mo, W, Al, Si, GaAs, GaP, InP, Ge, Al2O3 and AlN.
5 more elements
Dependencies are inferred from the claim text.