Method of manufacture of advanced heterojunction transistor and transistor laser

A method of manufacturing a heterojunction bipolar transistor comprising:

• forming a GeSn base region;
• forming an emitter base junction comprising a first conduction band offset, the first conduction band offset being less than 0.1 electron volts;
• and
• forming a base collector junction comprising a second conduction band offset, the second conduction band offset being less than 0.1 electron volts.

A device comprising:

• a first heterojunction bipolar transistor comprising a PNP device having a first GeSn base region, a first emitter base junction, and a first base collector junction;
• and
• a second heterojunction bipolar transistor comprising an NPN device having a second GeSn base region, a second emitter base junction, and a second base collector junction;
• wherein:
• the first heterojuction biopolar transistor and the second heterojunction bipolar transistor are located over a common substrate;
• the first emitter base junction comprises a first conduction band offset less than 0.1 electron volts;
• the first base collector junction comprises a second conduction band offset less than 0.1 electron volts;
• the second emitter base junction comprises a third conduction band offset less than 0.1 electron volts;
• and
• the second base collector junction comprises a fourth conduction band offset less than 0.1 electron volts.

A method of manufacturing a device comprising:

• forming a first heterojunction bipolar transistor over a common substrate, the first heterojunction bipolar transistor comprising a PNP device having a first GeSn base region, a first emitter base junction, and a first base collector junction;
• and
• forming a second heterojunction bipolar transistor over the common substrate, the second heterojunction bipolar transistor comprising an NPN device having a second GeSn base region, a second emitter base junction, and a second base collector junction;
• wherein:
• the first emitter base junction comprises a first conduction band offset less than 0.1 electron volts;
• the first base collector junction comprises a second conduction band offset less than 0.1 electron volts;
• the second emitter base junction comprises a third conduction band offset less than 0.1 electron volts;
• and
• the second base collector junction comprises a fourth conduction band offset less than 0.1 electron volts.

A transistor laser comprising:

• a heterojunction bipolar transistor comprising:
• a GeSn active region;
• an emitter base junction comprising a first conduction band offset;
• and
• a base collector junction comprising a second conduction band offset;
• wherein:
• the first conduction band offset is less than 0.1 electron volts;
• and
• the second conduction band offset is less than 0.1 electron volts.

A method of forming a transistor laser, the method comprising:

• forming a heterojunction bipolar transistor comprising a GeSn active region, forming an emitter base junction comprising a first conduction band offset, and forming a base collector junction comprising a second conduction band offset;
• wherein:
• the first conduction band offset is less than 0.1 electron volts;
• and
• the second conduction band offset is less than 0.1 electron volts.

A transistor laser comprising:

• a GeSn active region;
• wherein:
• the GeSn active region comprises a GeSn quantum well or a GeSn quantum dot;
• and
• the GeSn quantum well or the GeSn quantum dot is located within a Ge barrier or a GaAs barrier.