Photoelectric conversion device

A photoelectric conversion device comprising:

• a crystalline silicon substrate including a first surface and a second surface opposite to the first surface;
• a first semiconductor layer over the first surface of the crystalline silicon substrate;
• a second semiconductor layer over the first semiconductor layer;
• a first light-transmitting conductive film over the second semiconductor layer;
• a first electrode over the first light-transmitting conductive film;
• a third semiconductor layer in contact with the second surface of the crystalline silicon substrate;
• a fourth semiconductor layer in contact with the third semiconductor layer;
• a second light-transmitting conductive film in contact with the fourth semiconductor layer;
• and
• a second electrode in contact with the second light-transmitting conductive film,
• wherein the second light-transmitting conductive film comprises an organic compound and an inorganic compound,
• wherein the organic compound is 4-phenyl-4′-(9-phenylfluoren-9-yl)triphenylamine (abbreviation:
• BPAFLP),
• wherein the inorganic compound is an oxide of a metal belonging to any of Groups 4 to 8 of the periodic table, and
• wherein the second light-transmitting conductive film is a reflection film.