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US 9,437,751 B2Granted
Non-volatile memory device including charge trapping layer and method for fabricating the same
AssigneeSK Innovation Co., Ltd.
InventorJun-Hyung Kim
Life of this patent
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Abstract
A non-volatile memory device includes a charge trapping layer for trapping charges. The charge trapping layer includes a linker layer formed over a substrate and including linkers to be bonded to metal ions metallic nanoparticles formed out of the metal ions over the linker layer and a nitride filling gaps between the metallic nanoparticles.
Claims19
A method for fabricating a non-volatile memory device, comprising:
- forming a tunneling layer over a substrate;
- and
- forming a charge trapping layer over the tunneling layer,
- wherein the forming of the charge trapping layer comprises:
- forming a linker layer, which includes linkers, over the tunneling layer;
- forming metal ions over the linker layer;
- forming metallic nanoparticles by growing from the metal ions;
- and
- forming a nitride over the metallic nanoparticles,
- wherein the metallic nanoparticles are formed through reduction and growth of the metal ions being formed over the linker layer prior to forming the metallic nanoparticles.
7 more elements
A method for fabricating a non-volatile memory device, comprising:
- forming a tunneling layer over a substrate;
- and
- forming a charge trapping layer over the tunneling layer,
- wherein the forming of the charge trapping layer comprises:
- forming dielectric particle supporters over the tunneling layer;
- forming linkers over the dielectric particle supporters;
- bonding metal ions to the linkers;
- forming metallic nanoparticles by growing from the metal ions;
- and
- forming a nitride over the metallic nanoparticles,
- wherein the metallic nanoparticles are formed through reduction and growth of the metal ions being formed over the linkers prior to forming the metallic nanoparticles.
8 more elements
Dependencies are inferred from the claim text.