Semiconductor device

A semiconductor device comprising:

• a transistor comprising:
• a first insulating film over a substrate;
• a first oxide insulating film over the first insulating film;
• an oxide semiconductor film over and in contact with the first oxide insulating film;
• source and drain electrodes in contact with the oxide semiconductor film;
• a second oxide insulating film over and in contact with the oxide semiconductor film;
• and
• a second insulating film over the second oxide insulating film;
• a pixel electrode over the second insulating film;
• and
• a capacitor comprising;
• a film having conductivity over the first oxide insulating film;
• the second insulating film over and in contact with the film having conductivity;
• and
• the pixel electrode,
• wherein the first insulating film and the second insulating film are in physical contact with each other, and
• wherein the pixel electrode is in contact with one of the source and drain electrodes in an opening in the second insulating film.

A semiconductor device comprising:

• a transistor comprising:
• a first gate electrode over a substrate;
• a first insulating film over the first gate electrode;
• a first oxide insulating film over the first insulating film;
• an oxide semiconductor film over and in contact with the first oxide insulating film;
• source and drain electrodes in contact with the oxide semiconductor film;
• a second oxide insulating film over and in contact with the oxide semiconductor film;
• a second insulating film over the second oxide insulating film;
• and
• a second gate electrode over the second insulating film;
• a pixel electrode over the second insulating film;
• and
• a capacitor comprising;
• a film having conductivity over the first oxide insulating film;
• the second insulating film over and in contact with the film having conductivity;
• and
• the pixel electrode,
• wherein the first insulating film and the second insulating film are in physical contact with each other,
• wherein the first gate electrode and the second gate electrode overlap each other with the oxide semiconductor film provided therebetween, and
• wherein the pixel electrode is in contact with one of the source and drain electrodes in a first opening in the second insulating film.