Finfet seal ring
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsTsung-Yuan Yu, Hsien-Wei Chen
Life of this patent
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Abstract
A semiconductor device includes a first front-end-of-line (FEOL) seal ring on a substrate, the seal ring comprising ring-shaped fin-like structures, integrated circuitry formed on the substrate, the integrated circuitry being circumscribed by the first seal ring, an isolation zone between the seal ring and the integrated circuitry, the isolation zone comprising a set of fin structures, each fin structure facing a same direction.
Claims20
A semiconductor device comprising:
- a first front-end-of-line (FEOL) seal ring on a substrate, the first FEOL seal ring comprising ring-shaped fin-like structures;
- integrated circuitry formed on the substrate, the integrated circuitry being circumscribed by the first FEOL seal ring;
- an isolation zone between the first FEOL seal ring and the integrated circuitry, the isolation zone comprising a set of fin structures, each fin structure facing a same direction;
- wherein the first FEOL seal ring comprises an inner metal line and an outer metal line with a space between the inner metal line and outer metal line, the ring-shaped fin-like structures being within the space.
An integrated circuit formed onto a semiconductor wafer, the integrated circuit comprising:
- front-end-of-line (FEOL) circuitry formed onto the wafer;
- a first seal ring circumscribing the FEOL circuitry, the seal ring comprising a plurality of concentric ring-shaped fin-like structures;
- and
- an isolation zone between the first seal ring and the circuitry, the isolation zone comprising a plurality of fin structure units formed along an inner circumference of the first seal ring, each fin structure unit comprising:
- a series of fin structures facing a same direction;
- and
- at least one dummy gate formed over the fin structures;
- wherein each of the fin structures from each of the fin structure units faces the same direction;
- wherein the seal ring comprises an inner metal line and an outer metal line with a space between the inner metal line and outer metal line, the ring-shaped fin-like structures being within the space.
A method for fabricating a semiconductor device, the method comprising:
- forming integrated circuitry onto a semiconductor substrate;
- forming a seal ring that circumscribes the integrated circuitry, the seal ring comprising a set of concentric ring-shaped fin-like structures;
- forming a set of fin structures within an isolation zone between the inner circumference of the seal ring and the integrated circuitry, each of the fin structures facing a same direction;
- and
- forming a number of dummy gates over the fin structures;
- wherein the ring-shaped fin-like structures are between an outer metal line of the seal ring and an inner metal line of the seal ring.
Dependencies are inferred from the claim text.