Dynamic threshold MOS and methods of forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorJam-Wem Lee
Life of this patent
Estimating the term…
Abstract
A chip includes a semiconductor substrate, a well region in the semiconductor substrate, and a Dynamic Threshold Metal-Oxide Semiconductor (DTMOS) transistor formed at a front side of the semiconductor substrate. The DTMOS transistor includes a gate electrode, and a source/drain region adjacent to the gate electrode. The source/drain region is disposed in the well region. A well pickup region is in the well region, and the well pickup region is at a back side of the semiconductor substrate. The well pickup region is electrically connected to the gate electrode.
Claims20
A method comprising:
- implanting a semiconductor substrate to form a well region extending from a back surface of the semiconductor substrate into the semiconductor substrate;
- forming a well pickup region extending from the back surface of the semiconductor substrate into the well region;
- forming a transistor at a front surface of the well region, wherein the forming the transistor comprises forming a gate electrode;
- and
- forming metallic features electrically interconnecting the gate electrode and the well pickup region.
A method comprising:
- forming first isolation regions extending from a back surface of a semiconductor substrate into the semiconductor substrate;
- cleaving a front portion of the semiconductor substrate to separate the front portion apart from a remaining portion of the semiconductor substrate, wherein a front surface of the front portion of the semiconductor substrate is exposed;
- forming second isolation regions extending from the front surface of the semiconductor substrate to the first isolation regions;
- and
- forming a transistor at the front surface of the semiconductor substrate.
A method comprising:
- forming first isolation regions extending from a back surface of a semiconductor substrate into the semiconductor substrate;
- forming a well region extending from the back surface of the semiconductor substrate into the semiconductor substrate;
- forming a well pickup region extending from the back surface of the semiconductor substrate into the well region;
- implanting the semiconductor substrate to form a hydrogen-concentrated layer, wherein the hydrogen-concentrated layer is spaced apart from the first isolation regions;
- annealing the semiconductor substrate and simultaneously applying a sideway mechanical force on the semiconductor substrate to remove a portion of the semiconductor substrate, with a front surface of the semiconductor substrate exposed;
- and
- forming second isolation regions extending from the front surface of the semiconductor substrate to the first isolation regions.
Dependencies are inferred from the claim text.