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US 9,437,729 B2Granted
High-density power MOSFET with planarized metalization
AssigneeVishay-Siliconix
InventorJian Li
Life of this patent
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Abstract
A method for producing a power MOSFET. The method includes fabricating a plurality of layers of a power MOSFET to produce an upper surface active area and performing a chemical mechanical polishing process on the active area to produce a substantially planar surface. A metalization deposition process is then performed on the substantially planar surface and the fabrication of the power MOSFET is subsequently completed.
Claims15
A method for producing a power MOSFET, comprising:
- fabricating a plurality of layers of a power MOSFET and an integrated Schottky device to produce an upper surface active area;
- performing a chemical mechanical polishing process on the upper surface active area to produce a substantially planar surface, wherein a gate contact is coplanar with an oxide deposit, wherein the oxide deposit comprises a source region, and wherein the oxide deposit comprises a drain region;
- performing a metalization deposition process on the substantially planar surface, wherein a portion of the metallization deposition is in contact with the gate contact;
- and
- completing fabrication of the power MOSFET and Schottky device.
2 more elements
A method for producing a high density power MOSFET, comprising:
- fabricating a plurality of layers of a power MOSFET and an integrated Schottky device to produce an upper surface active area;
- performing a chemical mechanical polishing process on the upper surface active area to produce a substantially planar surface, wherein a gate contact is coplanar with an oxide deposit, wherein the oxide deposit comprises a source region, and wherein the oxide deposit comprises a drain region;
- performing a metalization deposition process on the substantially planar surface, wherein the metalization deposition is configured to deposit a metal layer less than 4 microns deep, wherein a portion of the metallization deposition is in contact with the gate contact;
- and
- completing fabrication of the power MOSFET and Schottky device.
2 more elements
Dependencies are inferred from the claim text.