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US 9,437,725 B2Granted
Semiconductor device and semiconductor substrate
AssigneeSumitomo Electric Industries, Ltd.
InventorKen Nakata
Life of this patent
Estimating the term…
Abstract
A semiconductor device is provided, which includes a barrier layer 14 formed on a substrate 10 and made of InxAlyGa1-x-yN, a channel layer 16 formed on the barrier layer and made of GaN or InGaN, an electron supplying layer 18 formed on the channel layer and made of AlGaN, InAlN, or InAlGaN, and a gate electrode and ohmic electrodes 24 and 26 formed on the electron supplying layer. Relations between x and y for the barrier layer of x>0, y>0, x+y≦1, and 0.533x<y<4.20x are satisfied.
Claims17
A semiconductor device, comprising:
- a barrier layer formed on a substrate and made of one of InAlGaN and InAlN;
- a channel layer formed on the barrier layer and made of one of GaN and InGaN;
- an electron supplying layer formed on the channel layer and made of one of AlGaN, InAlN, and InAlGaN;
- and
- a gate electrode and ohmic electrodes formed on the electron supplying layer,
- wherein an interface between the barrier layer and the channel layer and an interface between the channel layer and the electron supplying layer have a conduction band energy lower than the Fermi level energy, whereby the conduction band at the channel layer forms an inverted U shape;
- and
- wherein the channel layer has a thickness of not less than 20 nm and not more than 100 nm.
5 more elements
A semiconductor device, comprising:
- a barrier layer formed on a substrate, the barrier layer being a single layer having a uniform composition of InxAlyGa1-x-y N;
- a channel layer formed on the barrier layer and made of one of GaN and InGaN;
- an electron supplying layer formed on the channel layer and made of one of AlGaN, InAlN, and InAlGaN;
- and
- a gate electrode and ohmic electrodes formed on the electron supplying layer,
- wherein relations between x and y for the barrier layer of x>0, y>0, x+y≦1, and 0.533x<y<4.20x are satisfied.
3 more elements
A semiconductor substrate, comprising:
- a barrier layer formed on a substrate, the barrier layer being a single layer having a uniform composition of InxAlyGa1-x-yN;
- a channel layer formed on the barrier layer and made of one of GaN and InGaN;
- and
- an electron supplying layer formed on the channel layer and made of one of AlGaN, InAlN, and InAlGaN,
- wherein relations between x and y for the barrier layer of x>0, y>0, x+y≦1, and 0.533x<y<4.20x are satisfied.
2 more elements
Dependencies are inferred from the claim text.